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STMicroelectronics introduces gapDRIVE with on-chip galvanic isolation

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article image ST’s gapDRIVE

Semiconductor specialist STMicroelectronics Pty Ltd announces the launch of the STGAP1S, an advanced single-channel gate driver integrating galvanic isolation with analogue and logic circuitry in the same chip to simplify driver design while ensuring high noise immunity for safe and reliable power control.

The first in ST’s new generation of gapDRIVE gate drivers that combine proprietary bipolar-CMOS-DMOS (BCD) process technology with innovations enabling an isolation layer to be grown on-chip to allow even greater system integration, the STGAP1S is a robust device allowing up to 1500V to be present on the high-voltage rail without interfering with other circuitry, making it ideal for use in industrial drives, high-power 600V or 1200V inverters, solar inverters, and uninterruptible power supplies.

Key features of STGAP1S gate driver include signal-propagation delay of 100ns across the isolation layer enabling transmission of high-accuracy PWM signals; integrated driver stage can sink or source up to 5A, with a rail-to-rail output allowing negative drive voltages for use with large IGBTs or wide-band gap power switches such as silicon-carbide MOSFETs; high common-mode transient immunity in excess of ±50V/ns, allowing reliable communication across the isolation layer and safe operation; and separate sink and source outputs enhancing design flexibility and eliminating external components.

A built-in SPI port in the STGAP1S provides an industry-standard host connection for configuring the control logic and monitoring status on the fly. The STGAP1S is able to provide rich digital diagnostics to the host via this interface, allowing enhanced system protection and reliability.

The STGAP1S also integrates an extensive set of protection features maximising reliability in harsh industrial environments, including an active Miller clamp in the power stage to prevent unwanted transistor turn-on; desaturation detection to protect the power switch under short-circuit conditions; collector-emitter overvoltage protection; output two-level turn-off capability to prevent damaging voltage overshoot, over-temperature protection, Under-Voltage Lockout (UVLO) and Over-Voltage Lockout (OVLO); and a dedicated sense pin for over-current detection.

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