SANDISK Corporation, represented by VME Systems , has introduced a two gigabit single-die NAND flash memory device. In addition, two of the 2Gb die will be packaged in a single TSOP (Thin Small Outline Package) to produce a 4Gb (512 megabyte) NAND component.
The 2 and 4Gb products were announced at the CeBIT trade show where SanDisk is showing several new products.
The 2Gb device, twice the capacity of SanDisk's largest NAND component offering, was developed jointly by Toshiba Corporation and SanDisk and incorporates SanDisk's patented multi-level cell (MLC) technology and the next generation 0.13 micron NAND flash technology.
MLC allows two bits of data to be stored in each memory cell, effectively doubling memory capacity compared to traditional NAND flash.
The technology will be used to build flash memory cards and as embedded memory in a growing number of electronic products that require higher capacity storage.
The 2Gb NAND memory chip will be produced using the advanced 0.13 micron process technology at the Flash Vision Japan Joint Venture established by Toshiba Corporation and SanDisk and located in Yokkaichi, Japan.
SanDisk now offers several flash memory components ranging from 128 megabit to the new 2Gbit product.
It is expected that the new 2Gb device will start sampling this month. Sampling of the 4Gb device is expected to start in April, 2003.
SanDisk also plans on introducing lower density derivative devices using this core technology throughout 2003.