Home > Toshiba expands line-up of 650V SiC Schottky barrier diodes

Toshiba expands line-up of 650V SiC Schottky barrier diodes

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article image Schottky barrier diode

Toshiba International announces the expansion of 650V silicon carbide (SiC) Schottky barrier diodes (SBD) by the Semiconductor & Storage Products Company.

The four new insulated TO-220F-2L package products expand the 6A, 8A, 10A and 12A line-up from the current TO-220-2L package products.

Schottky barrier diodes are suited for applications including server power supplies and power conditioners for photovoltaic power generation systems. SBDs can also act as replacements for silicon diodes in switching power supplies, where they are 50% more efficient according to a Toshiba survey.

Key advantages of SiC power devices include more stable operation than current silicon devices even at high voltages and currents as they significantly reduce heat dissipation during operation; ability to meet diverse industry needs for smaller, more effective communications devices; and suitability for industrial applications ranging from servers to inverters.

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