Toshiba Corporation and SanDisk Corporation celebrated the opening of the second phase of the No. 5 semiconductor fabrication facility (Fab 5) and the start of construction of the new No. 2 fabrication facility (Fab 2) at Yokkaichi Operations, Toshiba’s NAND Flash memory plant in Mie prefecture, Japan.
Toshiba started construction of the second phase of Fab 5 in August 2013, with the installation of production equipment in the expanded facility supervised by Toshiba and SanDisk since July this year. Production began at the start of this month, with 15nm NAND flash memory process technology, the world’s smallest and most advanced node.
Toshiba is constructing the new Fab 2 to convert Toshiba and SanDisk’s current 2D NAND capacity to 3D NAND, with production to begin in 2016.
Yasuo Naruke, Corporate Executive Vice President of Toshiba Corporation and President and CEO of Semiconductor & Storage Products Company, commented that Toshiba’s determination to develop advanced technologies underlined the company’s commitment to respond to continued demand of NAND flash memory.
Sanjay Mehrotra, President and Chief Executive Officer of SanDisk adds that Fab 5 Phase 2 and the future new Fab 2 will provide both companies with the cleanroom space needed to continue converting their installed NAND capacity to new advanced technology nodes.
Toshiba and SanDisk see long-term demand growth for NAND flash memory, particularly for smartphones, tablets and SSDs. The companies will continue to strengthen their competitiveness and market leadership through development and production of advanced flash memory technologies.