Vishay Intertechnology, represented by Soanar in Australia and New Zealand, have unveiled 20V P-Ch TrenchFET MOSFET, a device built on their new p-channel TrenchFET Gen III technology. This 20-V device has the lowest on-resistance ever achieved for a p-channel MOSFET with the footprint area of an SO-8.
The new Si7137DP offers an ultra-low on-resistance of 1.9mΩ at 10V, 2.5mΩ at 4.5V, and 3.9mΩ at 2.5V. The low on-resistance of the TrenchFET Gen III MOSFETs is translated into lower conduction losses, allowing the devices to perform switching tasks with less power loss.
For applications where a 20-V device is sufficient, the Si7137DP frees up designers from having to rely on 30-V power MOSFETs, which until recently were the only p-channel devices available within this low on-resistance range. The closest 20-V p-channel device with a ≥ 12-V gate-to-source rating features on-resistance of 14mΩ at 4.5-V gate drive and is not characterised for a 10-V gate-to-source voltage.
Vishay TrenchFET technology yields products that raise the bar for power MOSFET performance in application areas such as computing, communications and consumer electronics.