Samsung Semiconductor and Agere Systems have announced a collaborative development agreement for high-speed Network-DRAM devices for next-gen 10GbE and SONET applications.
Under the agreement, Samsung’s Network-DRAM high-speed memory technology will be used with Agere’s PayloadPlus family of programmable network processors for deep packet processing in high-speed networks.
The technology is also fully compatible with fast cycle random access memory (FCRAM) – a high-speed networking memory technology jointly developed by Fujitsu and Toshiba.
Both Agere and Samsung have initiated agreements with both Fujitsu and Toshiba, according to Samsung Semiconductor marketing VP Tom Quinn.
“Network-DRAM reduces latency and bus turnaround time, which are key to achieving fast random access time in today’s telecommunications and networking systems,’ Quinn said.
“We are committed to the long-term support of Network-DRAM, and our next-generation will support industrial temperature ranges, targeting 400MHz double data rate (800Mbps) effective performance.”
Target customers for the Network-DRAM devices include high-capacity network and telecomms systems OEMs, according to Gartner semiconductor memory analyst Richard Gordon.
“The advent of memory technologies such as Network-DRAM gives system OEMs the advanced tools necessary to architect solutions that can take advantage of ever-increasing processing power and bandwidth,” Gordon added.