Home > STMicroelectronics releases high speed insulated-gate bipolar transistors with lower energy losses

STMicroelectronics releases high speed insulated-gate bipolar transistors with lower energy losses

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article image The N3523I energy-saving power family from STMicroelectronics boosts efficiency, safety, and reliability

ST Microelectronics introduces the new HB series of Insulated-Gate Bipolar Transistors (IGBTs) featuring lower turn-off energy losses.

The HB Series IGBTs leverage ST’s advanced Trench-Gate Field-Stop High-Speed technology to have a minimal collector-current turn-off tail as well as very low saturation voltage down to 1.6V (typical), minimising energy losses during switching and when turned on. The IGBTs have up to 40% lower turn-off energy losses than competing high-frequency devices, while reducing conduction losses by up to 30%.

In addition, the technology is well controlled, producing a tight distribution window of parameters, enhancing repeatability and simplifying system design.

ST’s HB series IGBTs enhance the energy efficiency of solar inverters, induction heaters, welders, uninterruptible power supplies, power-factor correction, and other high-frequency power converters. 

The extended voltage rating of 650V ensures at least 600V breakdown voltage in ambient temperatures down to -40°C, making the devices ideal for solar inverters marketed in colder climates. The maximum operating junction temperature of 175°C and wide Safe Operating Area (SOA) increase reliability and allow smaller heat sinks.

Options include maximum current ratings from 30A to 80A (at 100°C), a selection of popular power packages, and co-packed diode optimised for resonant or hard-switching circuits.

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