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ST Microelectronics has released its first radiation-hardened power MOSFETs

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article image Radiation hardened MOSFETs

ST Microelectronics has released its first radiation-hardened power MOSFETs
Radiation-hardened power MOSFETs from ST Microelectronics are designed to withstand radiation in Space.

ST Microelectronics has introduced the first member of a family of power transistors that are fully qualified for use in electronic subsystems on board satellites and launchers.

The main requirement for space-qualified components is the ability to withstand the space radiation, from radiation belts, solar winds and flares, and galactic cosmic rays.

Radiation hardened devices are capable of operating in this environment with a long life span when submitted to radiation from space. Utilising specific design and technology trimming to endure exposure to radiation and to minimize the tendency for important parameters such as threshold voltage, leakage currents and dynamic characteristics to drift under exposure, the where achieved.

Developed in conjunction with the support of the European Space Agency (ESA) and the Centre National d’Etudes Spatiales (CNES), ST’s new family of radiation-hardened power MOSFETs is produced in Europe and fully qualified to ESCC (European Space Components Coordination) specifications.

ST’s move will not only increase the global supply of space-qualified components, but will also overcome trade restrictions that can delay project completion or prevent access to certain devices and markets

The new radiation-hardened power MOSFET family spans current ratings from 6A to 80A and comprises five N-channel and P-channel devices, including: the STRH100N10 and STRH8N10 and STRH40P10, which offer voltage ratings of 100V; and the STRH100N6 and STRH40N6 with voltage ratings of 60V. The 100-volt P-channel device has a current rating of 34A. With their low gate charge, a characteristic of ST’s STripFET technology which enhances switching performance, they are ideal for use in DC power modules such as motor controllers and linear regulators, as well as line switches and e-fuses for current limiting.

Main features of ST power MOSFETs include:
Fast switching performance
100% avalanche tested
Hermetically sealed package
Withstands 70/100 krad Total Ionizing Dose (TID)
SEE radiation hardened

Now available to EM (Engineering Model) or ESCC flight quality level, in TO254-AA and TO-39 through-hole packages is the STRHxxxN10, STRHxxxN6 and STRH40P10 family. Also on offer is an SMD.5 surface-mount configuration. The STRH100N10 is qualified to the ESCC 5205/021 specification and the other products are expected to be ESCC qualified in H2 2011.

To provide the global space industry with a new source of affordable, high-performing space-grade power MOSFETs, ST has trimmed its proven STripFET fabrication technology to be compatible with the technologies and processes for producing radiation hardened components.

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