Home > ST Microelectronics extends its family of transistors with new STripFET VI DeepGATE power MOSFETs.

ST Microelectronics extends its family of transistors with new STripFET VI DeepGATE power MOSFETs.

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Extending its family of high-efficiency power transistors featuring sixth-generation STripFET technology, ST Microelectronics adds more choices for designers to deliver energy-saving advantages for a wider variety of applications with the new STripFET VI DeepGATE power MOSFETs, available now.

Withstanding maximum voltages up to 80V, the latest STripFET VI DeepGATE power MOSFETs allow the new technology to be used in solar applications (micro-inverters), telecommunications, networking and power supplies for servers. Permitting reliable operation in 48V telecom applications, the high voltage ratings delivers efficiency gains that aid operators reduce network running costs. In addition, consumer power supplies will draw less energy and will operate at lower temperatures for improved user comfort and longer life.


Major features of the STripFET VI DeepGATE power MOSFETs include:

  • 60V and 80V breakdown voltage
  • 0.0016 Ohm on-state resistance (STH260N6F6-2)
  • 180A current rating (STx260F6N6)
  • 100% avalanche rated

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