Home > N3574I advanced 1200V IGBTs from STMicroelectronics last longer, save more energy

N3574I advanced 1200V IGBTs from STMicroelectronics last longer, save more energy

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article image ST’s new H series 1200V IGBTs

STMicroelectronics Pty Ltd has released a new advanced range of IGBTs leveraging second-generation trench-gate field-stop high-speed technology to boost energy efficiency and ruggedness in various applications.

STMicroelectronics’ latest 1200V IGBTs find application in solar inverters, welders, uninterruptible power supplies, and PFC converters.

ST’s new H series 1200V IGBTs have up to 15% lower turn-off losses and up to 30% lower turn-on losses. The saturation voltage [Vce (sat)] down to 2.1V (typical, at nominal collector current and 100°C) ensures minimal overall losses for higher-efficiency operation at switching frequencies above 20 kHz.

The new 1200V IGBTs also offer the option of an integrated very fast-recovery anti-parallel diode for optimum performance in hard-switching circuits in addition to minimising energy losses in circuits with a freewheel diode.

Key benefits of the new IGBTs include extremely rugged design, with latch-up-free operation at up to four times the nominal current, and minimum short-circuit time of 5µs (at 150°C starting junction temperature); extended maximum operating junction temperature of 175°C for enhanced service lifetime and simplified system cooling; wide Safe Operating Area (SOA) for greater reliability in applications where high power dissipation is required; excellent EMI characteristics thanks to a near ideal waveform during switching events; and a positive temperature coefficient of Vce (sat), with close distribution of parameters from device to device, allowing safer parallel operation in high-power applications.

ST’s H series IGBTs are in mass production now in 15A, 25A, and 40A versions.

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