ST Microelectronics has won the prestigious BearingPoint Innovation Management Award for its FD-SOI technology in the ‘Innovation Ecosystem’ category.
ST Microelectronics received the recognition for a major breakthrough in the semiconductor industry involving the miniaturisation of electronic circuits with the Fully Depleted Silicon-On-Insulator (FD-SOI) technology that has proven its ability to deliver about 30% higher speed and 30% improvement in energy consumption for the chips that power today’s digital electronic equipment.
ST’s FD-SOI can bring significantly lower consumption to all the devices associated with the creation, transmission, storage and consumption of digital content from the network to the mobile device, helping not only to improve the quality of life of the people who use them, but also addressing major societal challenges in energy saving.
BearingPoint is an independent management and technology consultancy serving clients in more than 70 countries together with its global consulting network.
The 6th edition of the Innovation Management Awards was organised by BearingPoint in collaboration with the editorial board of the French magazine L’Expansion and the Ecole des PontsParisTech, a prestigious French school of engineering.
Based on inputs from 360 decision makers, 60 applications were proposed this year for the awards, from which 23 cases that illustrated the best practices of innovation in management were submitted to a jury of experts who selected a winning company in each of the four categories.
Describing the award as a major achievement for ST, its employees and its partners, Georges Penalver, Executive Vice President and Chief Strategy Officer, STMicroelectronics said the FD-SOI technology strengthens ST’s role in shaping the future of the microelectronics industry.