ST Microelectronics introduces surface-mount power MOSFET
ST Microelectronics has introduced a 250A surface-mount power MOSFET, STV250N55F3, with low on-resistance to minimise energy conversion losses and enable higher performance. The STV250N55F3 is designed to reduce operating costs and environmental footprint in applications such as electric vehicles
The STV250N55F3 is a power MOSFET, which combines PowerSO-10 package with ribbon bonding to achieve lower die-free package resistance. Implemented in high-density STripFET III fabrication process, the STV250N55F3 offers an on-resistance of 1.5 milliohms.
The benefits of the STripFET III include low switching losses and rugged avalanche characteristics. The nine-lead source connection also reduces on-resistance, in addition to aiding heat dissipation. Overall, the package is rated for 300W dissipation at 25 degrees Celsius.
The high current rating allows engineers to design-out multiple parallel MOSFETs to save board space and BOM costs. Standard driving thresholds also simplify driver-circuit design. The STV250N55F3 is rated for applications up to 55V.
The ability to operate at temperatures up to 175 degrees Celsius makes the STV250N55F3 suitable for use in high-current electric-traction applications such as forklift trucks, golf carts and pallet trucks, as well as lawn-mowers, wheelchairs, and electric bikes.
Reliability and robustness are assured through 100% avalanche testing both at wafer level as well as on finished products. In the future, the device will be eligible for automotive-grade applications.
The STV200N55F3, with 55V rating, implements a four-lead source connection and is rated for 200A continuous drain current.
21-Jul-2008