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LDMOS field effect transistor

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article image Typical CW performance is 20dB gain and 35% drain efficiency at 2W (26V, 960MHz).

M/A-Com, represented in Australia by RF Parts , has released the MAPLST0810-002PP 2W, unmatched LDMOS field effect transistor, designed for use in GSM/EDGE applications.

The operating frequency range is 860MHz to 960MHz. Typical CW performance is 20dB gain and 35% drain efficiency at 2W (26V, 960MHz).

Due to the unmatched configuration the transistor can be used up to 2200MHz. The MAPLST0810-002PP is built in a SMT plastic package and measures 7mm x 7mm.

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