RF Micro Devices, represented by RF Parts Australia , has released SPA-1526Z, a 2W, high linearity, single-stage, class A, Heterojunction Bipolar transistor (HBT) power amplifier.
The SPA-1526Z is made with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability.
The SPA-1526Z is well suited as a driver stage in macro/micro cell infrastructure equipment or as the final output stage in pico/cell infrastructure equipment.
The SPA-1526Z is also suitable for GSM, CDMA, TDSCDMA, WCDMA, IS-95, single and multi-carrier applications and all markets which require higher power linear operation.
Product specifications are operating frequency from 700 to 2200 MHz, 14 dB gain at 1960 MHz, P1dB=32dBm @ 2140 MHz, ACP = -65dBc with 18.4dBm channel power @ 2140MHz and Power Up/Down Control<1μs.
In addition to on-chip active-bias and on-chip input power detector, these amplifiers boast a robust Class-1C (1000V) HBM ESD performance.
Housed in RF Micro Devices’ hand reworkable SOF-26 package, the SPAs exhibit lower thermal resistance (Rth) and lower power dissipation (Pdiss) than competing parts. Parts are ROHS compliant.