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International Rectifier launches DirectFET MOSFET chipset

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article image DirectFET MOSFET chipset

International Rectifier  has introduced a 25V synchronous buck converter DirectFET MOSFET chipset for point-of-load (POL) converter designs, and server, high-end desktop and notebook computer applications.

The new 25V chipset combines International Rectifier’s new generation HEXFET MOSFET silicon and benchmark DirectFET packaging technology to deliver a high density, single control and single synchronous MOSFET solution in the footprint of an SO-8 and with slim 0.7 mm profile.

The new IRF6710S2, IRF6795M and IRF6797M devices are characterised with low on-resistance (RDS(on)), gate charge (Qg) and gate-to-drain charge (Qgd) to achieve increased efficiency and thermal performance and enable operation in excess of 25A per phase.

“The IRF6710S2 control MOSFET features ultra-low Rg and charge, and, when co-designed with the IRF6795M and IRF6797M synchronous MOSFETs which include integrated Schottky, provides a solution for high frequency, high efficiency DC-DC converters that delivers excellent performance over the entire load range,” said Vijay Viswanathan, International Rectifier’s Product Marketing Engineer for Enterprise Power Products.

The IRF6710S2 is ideally suited as a control MOSFET due to the device’s low gate resistance of 0.3 ohms and low Miller charge (Qgd) of 3.0 nC which significantly reduces switching losses.

The IRF6795M and IRF6797M feature low RDS (on) to significantly reduce conduction losses while the integrated Schottky reduces diode conduction losses and reverse recovery losses making these devices well suited for high current synchronous MOSFET circuits.

The IRF6795M and IRF6797M have a common MX footprint to allow easy migration from existing SyncFET devices.

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