International Rectifier has expanded its portfolio of RAD-Hard Logic Level gate drive MOSFETs with the introduction of 60 V, 100 V and 250 V MOSFETs for switch mode power supplies (SMPS), satellite power distribution systems and resonant power converters in high-reliability applications.
Compared to bipolar transistors, the new RAD-Hard MOSFETs can be driven directly from CMOS/TTL logic circuitry, eliminating the need for intermediate components, thereby reducing part count, simplifying drive circuitry and enhancing reliability.
Moreover, low on- state resistance (RDS (on)), fast switching and small size, make the new MOSFETs ideal alternatives to traditional bipolar devices.
“These new Logic Level MOSFETs provide an efficient and reliable solution to interfacing CMOS/TTL control circuits, eliminating the need for inefficient bipolar devices, bulky transformers, or expensive driver circuits,” said Eugene Kelly, marketing manager for IR’s Aerospace and Defense Discrete Products.
The extended family of MOSFETs includes N and P channel in single and multi-chip configurations offered in a range of through hole and surface mount packages including SMD-0.5, SMD-2, LCC-28, 14 lead flat pack, TO-205AF, Low-Ohmic TO-257AA, and MO-036AB.
The devices have total ionizing dose (TID) capability of up to 300 Krad(Si), single event effect (SEE) immunity to 82 MeV, and are available in screened and commercial off- the-shelf (COTS) versions.