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Insulated gate bipolar transistor

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article image Made with IR's thin wafer technology.

INTERNATIONAL Rectifier has released the IRGP50B60PD, a 600V non-punch-through (NPT) insulated gate bipolar transistor (IGBT) co-packaged with an enhanced 25A Hexfred diode capable of operating at switching speeds up to 150kHz.

It offers high efficiency performance for 1kW to 12kW high frequency switch-mode power supply circuits in telecom and server systems. Applications include power factor correction and full-bridge primary switching, high-power UPS, welding and industrial switching applications.

The IGBTs are made with IR's thin wafer technology, which ensures shorter minority carrier depletion time and fast turn-off. Negligible turn-off tail current and low turn-off switching loss, or EOFF, enables designers to achieve higher operating frequencies. The improvements in switching performance, combined with optimised (positive) thermal coefficient characteristics and the lower gate turn-on charge, enables higher current density. A positive temperature coefficient ensures safe, reliable, high efficiency current sharing when operated in parallel.

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