Fujitsu Semiconductor Limited (formerly Fujitsu Microelectronics Limited) announces the launch of a new GaN power device featuring a breakdown voltage of 150 V.
The new MB51T008A from Fujitsu Semiconductor Limited is a silicon substrate-based, gallium-nitride (GaN) power device, which enables normally-off operations, and is capable of achieving roughly one half the figure of merit (FOM) of silicon-based power devices with an equivalent breakdown voltage.
Fujitsu Semiconductor will now be able to offer GaN devices that contribute to smaller, more efficient power supplies for a wide range of fields, from home appliances and ICT equipment to automotive applications.
Key advantages of the MB51T008A power devices include on-state resistance of 13 milliohm and total gate charge of 16 nC; minimal parasitic inductance and high-frequency operations through the use of WLCSP packaging; and a proprietary gate design that enables normally-off operations.
Suitable for high-side switches and low-side switches in DC-DC converters employed in power supplies for data communications equipment, industrial products, and automobiles, the power device can achieve improvements in overall size and efficiency because it supports a higher switching frequency in power supply circuits.
Fujitsu Semiconductor is additionally developing models with breakdown voltages of 600 V and 30 V, thereby helping to enable enhanced power efficiency in a wide range of product areas. Based on the HEMT (High Electron Mobility Transistor) technology, these GaN power devices will be on display at ‘TECHNO- FRONTIER 2013’ to be held on July 17-19 at Tokyo Big Sight in Tokyo, Japan.