Cree, Inc., represented by Cutter Electronics and a market leader in silicon carbide (SiC) power semiconductors, has released sample availability of its first power-device combination pack (co-pack).
The new Cree co-pack solution is designed specifically to reduce costs and increase efficiency of inverters used in solar, UPS and motor-drive power applications.
The new Cree CID150660 co-pack features a 6-amp/600-volt Cree SiC Schottky diode, combined with a 15-amp silicon insulated gate bipolar transistor (IGBT) from International Rectifier. The Cree CID150660 co-pack is available in an industry-standard TO-220-3 package.
Cree’s new co-pack provides inverter designers with the potential to achieve new levels of efficiency at power levels up to 3 kW. This is the first in a series of co-pack products targeted to reduce IGBT switching losses of up to 50 percent and reduce overall inverter losses of up to 25 percent.
When compared with traditional silicon-based pn diodes, Cree’s SiC-based Schottky diodes and co-pack solutions provide lower switching losses, higher frequency operation, and higher power densities.