CREE, represented by Cutter Electronics has announced sample availability of breakthrough, high-performance GaN HEMT devices for broadband applications.
The CGH40025 delivers outstanding power, gain and efficiency required for broad bandwidths. Cree will showcase the device at their booth 631 at the IEEE MTT-S International Microwave Symposium 2007 being held June 3-8 in Honolulu, Hawaii.
The CGH40025, a general-purpose transistor for applications covering DC to 6 GHz, typically produces 30-W RF output power at 55-percent drain efficiency with 14 dB of gain when used in a 3.6-GHz amplifier.
Remarkably, the device features the industry’s small reported package footprint (0.15” x 0.54” or 0.15” x 0.2”) for a 25-W transistor.
“The CGH40025F is a significant new addition to our general-purpose GaN HEMT product line. The device is targeted for numerous applications requiring broad instantaneous bandwidth and high power where amplifier form factor and weight are critical,” explained Jim Milligan, Cree business area manager for RF products.
Also in their booth, Cree will demonstrate a broadband power amplifier producing an extraordinary 15 dB of gain, 50-W saturated output power (PSAT) and 45-percent drain efficiency over an instantaneous bandwidth of 500 MHz to 2.0 GHz.
This new level of performance, based on Cree’s CGH40045F part, is ideal for electromagnetic compatibility (EMC) and reconfigurable base-station applications.