High-capacity non-volatile memory
FUJITSU Microelectronics, represented in Australia by Crest Technologies , has released 1MBit ferroelectric random access memory (FRAM). The non-volatile memory that offers high-speed read and write operations, low power consumption and high endurance.
Fujitsu has also released 1T1C cell technology with a capacity twice that of its traditional 2T2C cell technology. This has been achieved without increasing the die size. With 0.35μm 1T1C cell technology, Fujitsu has been able to develop two 1Mbit FRAM devices - MB85R1001 (×8 bits) and MB85R1002 (×16 bits).
Applications include office equipment such as printers and photocopiers, portable information devices, home appliances such as microwave ovens and washing machines, and industrial equipment such as power meters. FRAM also provides a memory boost to applications such as store security information systems like Smart Card and RFID.
FRAM products are suitable for replacing random access memory (RAM) with Battery Backup. This will reduce the maintenance cost for the products. Development costs are also lowered by using random access memory (RAM) or read-only memory (ROM) replaceable FRAM.
15-Apr-2005