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New GaN HEMT Power Amplifiers and Switch Products from Clarke & Severn Electronics

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article image New GaN HEMT Power Amplifier & Switch Products

Clarke & Severn Electronics  offers a preview of a new range of packaged goods comprising of power amplifiers and GaN switches from RF & Microwave Products.   

Scheduled for launch later this year, the new products are part of an active expansion of their GaN MMIC and high power discrete product lines to include higher power, higher efficiency amplifiers as well as high dynamic range GaN switches and low noise amplifier (LNA) MMIC products.  

The product expansion will further extend the advantages of GaN for commercial and military systems, explained Jim Milligan, Cree, director of RF & Microwave Products.  

SPDT MMIC Switch (0.3 to 3 GHz):

Cree’s CMSA30025S is the first GaN MMIC SPDT switch to operate over the 300 MHz to 3 GHz range with less than 0.7 dB insertion loss, 30 dB isolation and less than 20 nec switching speed.  

Key features:

  • RF power handling capability is 25 watts CW at only 0.1 dB compression with an output intercept point higher than 60dBm
  • Compact size and low power consumption
  • Can be incorporated into a circuit with few additional components

25 Watt MMIC PA (10 MHz to 6 GHz):

Cree’s CMPA0060025F is a packaged GaN MMIC power amplifier operating from below 10 MHz up to 6 GHz with typical saturated output power of greater than 25 watts CW and power gain of 12 dB.  

These distributed amplifiers have typical drain efficiencies of 40% and are packaged within a 0.5-inch square footprint.

75 Watt MMIC PA (2.7 to 3.5 GHz):  

Cree’s CMPA2735075F is the first of a family of radar-centric packaged MMIC power amplifiers.  

Key features:

  • Provides 75 watts of pulsed RF power
  • Power gain of 20 dB over the 2.7 to 3.5 GHz frequency range
  • 50 ohm (in/out) matched MMIC typically provides 55% power added efficiency (PAE)
  • Housed in a small, 0.5-inch square package
  • Exhibits superior amplitude and phase droop characteristics

240 Watt Transistor (2.9 to 3.5 GHz):

Cree’s CGH35240F is a fully internally matched, 50-ohm power transistor employing Cree’s GaN on SiC technology for excellent thermal management and reliability.

Key features: 

  • Packaged transistor measures 0.70 x 0.95 inches
  • Provides saturated output power of greater than 220 watts
  • Power gain of greater than 11 dB over the 2.9 - 3.5 GHz frequency range with typical PAE of 60%  
  • Used in typical radar applications

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