Home > Cree RF’s GaN HEMT Transistors available from Clarke & Severn Electronics

Cree RF’s GaN HEMT Transistors available from Clarke & Severn Electronics

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article image Cree RF’s GaN HEMT Transistors

Clarke & Severn Electronics  supplies a range of communications products from Cree RF.  

Cree RF’S GaN HEMT transistors are designed for frequency-agile, software defined radios, 3G/4G telecom BTS, C-OFDM data-links and satcom applications.  

Cree’s GaN HEMT devices are suited for a host of communications applications.  

Cree RF’s GaN HEMT transistors are ideal for applications that seek to improve bandwidth, efficiency and frequency of operation, or for transmitters challenged to reduce size and weight.  

The GaN HEMT transistors enable significant savings on operating expenses.  

The Cree family of communications products includes 6W to 120W, unmatched, packaged discrete devices operating at DC-2 GHz, 1.8-2.3 GHz, 3.3-3.8 GHz and 4.9-5.8 GHz.  

The portfolio also includes high power internally matched devices at 120W and 240W levels operating at 1.8-2.3 GHz and 2.5-2.7 GHz.

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