Clarke & Severn Electronics introduces a range of high power broadband products from Cree RF.
Cree RF’s GaN HEMT packaged transistors as well as GaN HEMT die, MMICs and switches are available for extremely wide band applications.
GaN HEMT devices are ideal for ultra broadband amplifier applications. The intrinsic properties of high power density, low parasitic and high FT allow for multi-octave to instantaneous bandwidth amplifiers.
The high power broadband products include:
- Packaged, unmatched discrete transistors from output powers of 6W to 180W (CW) at 28V
- Packaged 50ohm MMIC amplifiers suitable for DC-6 GHz applications operating at 28V or 50V
- Bare discrete die and bare MMIC die designed for hybrid amplifiers and multi-function transmit/receive modules