Home > RFMD’s RF3932 GaN Unmatched Power Transistors available from Caelera

RFMD’s RF3932 GaN Unmatched Power Transistors available from Caelera

Supplier News

RF Micro Devices, Inc. has added the RF3932, a 75-watt, highly efficient gallium nitride (GaN) RF unmatched power transistor (UPT) to their family of GaN UPTs.

RFMD’s GaN devices are available from Caelera .

RFMD is a global leader in the design and manufacture of high-performance RF components and compound semiconductor technologies.

The RF3932 unmatched power transistors deliver superior performance versus competing GaAs and silicon power technologies.

RF3932 follows the recent release of the 140-watt RF3934, which is the highest output power device in RFMD's UPT family. RFMD plans to release a third GaN UPT device in the first quarter of 2011, significantly expanding the GaN power transistor options available to RFMD's customers.

Key features of RFMD's RF 3932 GaN unmatched power transistors 

  • Supports green architectures that reduce energy consumption, improves thermal management and optimises network efficiency for network operators
  • Operates over a broad frequency range (DC to 3GHz) and delivers high peak efficiency of >65%
  • Incorporates simple, optimised matching networks external to the package providing wideband gain and power performance advantages in a single amplifier
  • Packaged in a hermetic, flanged ceramic two-leaded package that leverages RFMD's advanced heat sink and power dissipation technologies to deliver excellent thermal stability and conductivity
  • Optimal for driver and/or output stages, depending on overall power requirements

Bob Van Buskirk, President of RFMD's Multi-Market Products Group (MPG) says that RFMD's GaN product portfolio clearly demonstrates their commitment to technology and product leadership.

Going forward, RFMD plans to introduce additional GaN devices that feature superior power density, high efficiency, rugged dependability and green power consumption advantages.

RFMD's 48-volt, high power-density GaN semiconductor process features high RF power density and efficiency, low capacitance as well as high thermal conductivity.

These features enable the development of compact and efficient high power amplifiers (HPAs) for a broad range of applications including private mobile radio (PMR), 3G/4G wireless infrastructure, ISM (industrial scientific & medical), military and civilian radar as well as CATV transmission networks.

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