Caelera offers the new RF3932, a 75-watt, highly efficient gallium nitride (GaN) RF unmatched power transistor (UPT) recently introduced by RF Micro Devices, Inc.
RFMD, a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies adds the new RF3932 power transistors to its family of GaN unmatched power transistors.
The new RF3932 power transistors deliver superior performance over competing GaAs and silicon power technologies.
The release of the RF3932 device follows the recent release of the 140-watt RF3934, the highest output power device in RFMD's UPT family. RFMD plans to release a third GaN UPT device shortly to significantly expand the GaN power transistor options available to RFMD customers.
RFMD's GaN unmatched power transistors support green architectures that reduce energy consumption, improve thermal management and optimise network efficiency for network operators.
RFMD's 48-volt, high power-density GaN semiconductor process features high RF power density and efficiency, low capacitance and high thermal conductivity, enabling the development of compact and efficient high power amplifiers (HPAs) for a broad range of applications.
Applications for the RF3932 power transistors include private mobile radio (PMR), 3G/4G wireless infrastructure, ISM (industrial scientific & medical), military and civilian radar, and CATV transmission networks.
Key features of RFMD’s RF3932 power devices:
- Operates over a broad frequency range (DC to 3GHz) and delivers high peak efficiency of >65%
- Incorporates simple, optimised matching networks external to the package, providing wideband gain and power performance advantages in a single amplifier
- Hermetic, flanged ceramic two-leaded packaging delivers excellent thermal stability and conductivity
- 75-watt RF3932 and 140-watt RF3934 devices are optimal for driver and/or output stages, depending on overall power requirements