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30W high performance LDMOS transistor

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article image Ideal for RF power amplification.

SIRENZA Microdevices has released a new 30-watt high performance LDMOS transistor housed in a ceramic flanged package.

Available from Caelera , the SLD-3091FZ discrete LDMOS FET is designed for operation from 10 to 1600MHz and is suitable for applications requiring high linearity and efficiency. The power transistor is fabricated using Sirenza’s high performance XeMOS II TM process.

It features a 30W output P1db, single polarity supply voltage, high gain of 18dB at 915 MHz, 45% efficiency at 30CW and integrated ESD Protection, Class 1B.

The robustness, high gain, and efficiency of the SLD-3091FZ makes it an ideal choice for RF power amplification.

Specific target applications include power amplifiers in base station PA driver amplifiers, repeaters, point-to-point radios, military radios, transmitters for HF, UHF, and VHF broadcast equipment, and avionics.

The SLD-3091FZ is available for immediate shipment in an RoHS compliant, lead-free package.

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