SIRENZA Microdevices has announced the production release of a new 30-watt high performance LDMOS transistor housed in a ceramic flanged package.
The SLD-3091FZ discrete LDMOS FET is designed for operation from 10 to 1600MHz and is suitable for applications requiring high linearity and efficiency.
Available from Caelera , the power transistor is fabricated using Sirenza’s high performance XeMOS II TM process.
It features a 30W output P1db, single polarity supply voltage, high gain of 18dB at 915MHz, 45% efficiency at 30CW and integrated ESD protection, Class 1B.
The robustness, high gain and efficiency of the SLD-3091FZ makes it suitable for RF power amplification.
Specific target applications include power amplifiers in base station PA driver amplifiers, repeaters, point-to-point radios, military radios, transmitters for HF, UHF, and VHF broadcast equipment, and avionics
The SLD-3091FZ is available for immediate shipment in an RoHS compliant, lead-free package.