Home > 30W high performance LDMOS transistor

30W high performance LDMOS transistor

Supplier News
article image 30-watt high performance.

SIRENZA Microdevices has announced the production release of a new 30-watt high performance LDMOS transistor housed in a ceramic flanged package.

The SLD-3091FZ discrete LDMOS FET is designed for operation from 10 to 1600MHz and is suitable for applications requiring high linearity and efficiency.

Available from Caelera , the power transistor is fabricated using Sirenza’s high performance XeMOS II TM process.

It features a 30W output P1db, single polarity supply voltage, high gain of 18dB at 915MHz, 45% efficiency at 30CW and integrated ESD protection, Class 1B.

The robustness, high gain and efficiency of the SLD-3091FZ makes it suitable for RF power amplification.

Specific target applications include power amplifiers in base station PA driver amplifiers, repeaters, point-to-point radios, military radios, transmitters for HF, UHF, and VHF broadcast equipment, and avionics

The SLD-3091FZ is available for immediate shipment in an RoHS compliant, lead-free package.

Newsletter sign-up

The latest products and news delivered to your inbox