SILICONIX has released -40V and -60V p-channel MOSFETs. They are available from Braemac .
The devices are aimed at automotive 12V boardnet high-side switches and electric motor drives. MOSFET on-resistance is reduced by p-channel technology. Maximum rDS(on) ratings range from 15 mΩ down to 4.2.mΩ for all six devices.
They require no additional high-side driver circuitry for turn-on. This helps reduce component count and improve reliability in automotive and industrial systems. When used to replace p-channel devices system power consumption can also be lowered. Conduction losses for the new devices are reduced by up to 90% compared to p-channel MOSFETs.
Package options for the -40V devices include the standard DPAK (SUD50P04-09L), the thermally enhanced D2PAK (SUM110P04-04L), and the leadless, 1.07mm high PowerPAK SO-8 (Si7463DP). The -60V devices are available in the DPAK (SUD50P06-15L), the thermally enhanced D2PAK (SUM110P06-07L), and PowerPAK SO-8 (Si7463DP). The DPAK and D2PAK devices are rated for a maximum junction temperature of 175°C, while the PowerPAK SO-8 TrenchFETs are rated for up to 150°C.