Home > High barrier-height Schottky rectifiers

High barrier-height Schottky rectifiers

Supplier News
article image

VISHAY Intertechnology, represented by Braemac , has announced a new series of 150V high barrier-height Schottky rectifiers offering a low forward voltage drop and leakage current under high temperature operating conditions.

Intended for use in high-frequency inverters, freewheeling, SMPS, and polarity protection applications in power supplies and adapters, the MBR Series 150-V H-type dual-rectifier devices provide industry-leading specifications not only with respect to forward voltage and high reverse energy, but also for maximum average forward rectified current - 10A in the TO-220 package outline.

Built on a proprietary Schottky barrier technology, the new devices offer a typical forward voltage drop as low as 0.65V, typical leakage current as low as 0.15mA at 125°C, and high maximum operating junction temperature of 175°C.

A reverse surge capability of 25kV ESD and inductive reverse avalanche energy ratings up to 20mJ enhance reliability. Forward voltage options of 10A, 20A, and 30A are available for devices in TO-220, ITO-220, and TO-262 package outlines.

These specifications represent an order of magnitude improvement over previous-generation Schottky rectifiers, with a reduction of leakage current by as much as half and a four-fold improvement in avalanche energy.

The new devices are the latest in the Vishay "H" series, which takes advantage of a phenomenon known as conductivity modulation to achieve low leakage current and a high operating temperature in a Schottky rectifier without increasing barrier-height and thus worsening voltage drop performance.

The result is a device that combines low leakage current, a high operating temperature, and low forward voltage drops to allow efficient operation with low losses even during high-frequency and high-temperature operation.

H-type series devices' metal-silicon junction is built using a proprietary sputtering process that guarantees a well-controlled barrier-height.

The resulting majority carrier conduction causes a forward voltage drop that is lower than a p-n junction rectifier, with negligible reverse recovery time.

An ion-implanted guardring technology provides excellent reverse energy capability, thereby ensuring overvoltage protection.

Newsletter sign-up

The latest products and news delivered to your inbox