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Flash memory for performance enhancement

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MANUFACTURED on the cost-effective 0.18-micron process technology, the new StrataFlash memory chip represents the third generation of Intel's multi-level cell (MLC) technology that allows twice the amount of data to be stored in a single memory cell.

Available from Braemac , Intel StrataFlash memory offers a cost-effective, single-chip solution for code execution and data storage.

The fast-read feature allows a software application to execute code directly out of Flash, rather than downloading to a device's random access memory for execution, saving the costs of redundant system memory and board space.

StrataFlash memory increases fast-read speeds by adding a 66MHz burst mode. Burst mode increases memory throughput up to 92MB/s, effectively four times faster than asynchronous reads on standard flash memory products.

For devices not capable of synchronous burst mode, the new chip also features an eight-word page mode that reads data more than twice as fast as traditional asynchronous Strata flash memory products.

StrataFlash memory uses three volts for the core device, and is available in either 3V or 1.8V I/O versions. The 3V StrataFlash memory is available in densities from 64Mbit to 256Mbit.

To find out more contact Braemac or visit http://developer.intel.com/design/flash/index.htm

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