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Common drain chipscale power MOSFETs

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TWO new common-drain, chipscale power MOSFETs that are the industry's first such p-channel and 30V n-channel devices were announced today by Siliconix, represented by Braemac .

Available in the compact 1.6mm by 2.4mm chipscale format with a 0.65-mm height profile, the new bi-directional Vishay Siliconix MICRO FOOT power MOSFET devices are 81% smaller than TSSOP-8 devices, yet provide similar on-resistance values and better thermal performance.

The 20V Si8901EDB offers ultra-low effective on-resistance of 0.030Ω, enabled by Vishay's TrenchFET MOSFET technology.

Providing a significant size reduction for lithium-ion and lithium-polymer smart battery packs in portable devices that presently use dual p-channel SO-8 or TSSOP-8 MOSFETs, the Si8901EDB can be used to shrink the battery pack circuit considerably or to increase cell volume and hence prolong battery life.

The 30V Si8904EDB is a compact solution for battery packs used in portable devices with a traditional common-drain n-channel configuration. The Si8904EDB extends Vishay's family of chipscale packaging to include the 30V value requested by many battery-pack manufacturers today.

The new device offers ultra-low on-resistance of 0.0225Ω, a value similar to that provided by existing TSSOP-8 or SO-8 devices, but in a significantly smaller footprint.

The 20V Si8901EDB and 30V Si8904EDB both will be used for battery-protection modules for single-cell LiB and LiP battery packs in cell phones, PDAs, MP3 players, and digital cameras. With their small dimensions, the new MICRO FOOT devices help to prolong standby and talk times by freeing up space that can be used for a larger battery.

Vishay Siliconix MICRO FOOT devices use a solder bump process along with proprietary techniques developed at Siliconix to eliminate the need for an outer package to encase the power MOSFET die, greatly reducing the size of the devices required to switch power and analogue signals in cell phones and other handheld systems while also providing a significant reduction in parasitic inductance.

ESD protection is 6 kV for the Si8901EDB and 4 kV for the Si8904EDB. Both devices are fully electrically tested and delivered in tape-and-reel packaging.

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