Home > Cypress Semiconductor’s nvSRAMs win Memory Product of the year Award

Cypress Semiconductor’s nvSRAMs win Memory Product of the year Award

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article image Non-volatile SRAMs

Cypress Semiconductor’s non-volatile SRAMs (nvSRAMs) have been named Product of the Year in the Memory category of Global Source's EE Times-China Annual Creativity in Electronics (ACE) Awards.

The Products of the Year recognise leadership and excellence in product design, with awards going to the product or technology that significantly impacts or has a potential to impact the Chinese electronics market.

Winners were chosen by a panel of industry experts and were announced at a gala coinciding with the 12th International IC-China Conference and Exhibition (IIC-China 2007).

Cypress nvSRAMs internally store data when power is lost, with no battery required. The elimination of the external battery enables the Cypress nvSRAMs to deliver the RoHS-compliant, high-speed devices in smaller packages than alternative solutions.

The nvSRAMs are ideal for any application requiring continuous high-speed writing of data and absolute non-volatile data security, such as redundant array of independent disks (RAID) applications, copiers, PoS terminals, handheld meters and consumer electronics products.

These nvSRAMs are one of the first in a family of devices being developed pursuant to Cypress's previously announced agreements with Simtek Corporation, the inventor and pioneer of nvSRAMs.

According to Cypress, China is an important market for Cypress nvSRAMs, and it is pleased to have its technology recognised by EE Times-China.

Customers have quickly recognised the advantages of non-volatile SRAMs over battery-backed solutions due to its infinite high speed write capabilities, RoHS compliance, ease of board layout and integration into the manufacturing flow.

The nvSRAMs are available from Avnet.

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