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Low voltage MOSFET saves 60% space

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FAIRCHILD Semiconductor, represented by Arrow Electronics , has announced the FDJ129P, a new P-Channel MOSFET that offers a combination of performance and space-savings benefits in power management.

The FDJ129P features Fairchild's high-performance PowerTrench technology in a compact SC75 FLMP (flip leaded moulded package).

The result is a 60% board space reduction, compared to similar MOSFET solutions offered in SSOT-6 or TSOP-6 packages.

The FDJ129P's power dissipation is 1.8W and has a maximum steady-state current of 4.2A -- a maximum steady state current rating twelve times greater than SC75-packaged technology.

The FDJ129P offers similar performance to a typical TSOP-6 based product, such as the FDC640P, but consumes 60% less board area and has a 34% lower profile than the TSOP-6 package.

In addition, the FDJ129P reduces system power drain by providing low-loss switching, with a maximum steady-state current of 4.2A and a maximum pulsed current of 16A.

Fairchild is the first to offer a P-Channel MOSFET in FLMP packaging. This patented package eliminates conventional wire-bonds to provide extremely low electrical resistance.

The FLMP package also provides a low thermal resistance path between the PCB and the MOSFET die (drain connection). The combination of lower electrical resistance and lower thermal resistance greatly enhances performance in power management applications.

The reduced package height of the FDJ129P (maximum 0.8mm) allows this product to be used under RF shields and internal sub-assemblies and displays.

In addition to packaging advantages, this new device provides extremely low RDS(on) (70mΩ @ VGS = -4.5V and 120mΩ @ VGS = -2.5V) and low gate charge (@VGS +/- 12V = Qg less than or equal to 6nC).

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