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High-linearity mixer for 3G base stations

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AGILENT Technologies has introduced a high linearity, low LO (local oscillator) power E-pHEMT (enhancement mode pseudomorphic high electron mobility transistor) MMIC (microwave monolithic integrated circuit) mixer.

The device is designed to meet the critical performance requirements of BTS (3G base station) radio cards and other point-to-point and point-to-multipoint microwave radio link applications.

The IAM-92516, from Agilent's semiconductor products group, combines high linearity with the industry's lowest LO drive requirement, low power consumption and widest operating frequency range. It operates with RF and LO frequency inputs from 400 to 3500MHz.

IF output extends from dc to 300MHz. In addition to being used as a frequency up/down converter, this device can also serve as a high-performance modulator for microwave transmitters, a demodulator for receivers and a general-purpose resistive FET mixer for other high linearity applications.

The IAM-92516 operates from a single 3.3V dc to 5V dc supply, consuming only 26mA typical at 5 volts. It provides greater than 27 dBm third-order input intercept point (IP3), 9dBm output power, 1dB gain compression, 6dB conversion loss and 12.5 dB noise figure (all typical).

LO to IF, LO to RF and RF to IF isolation are each greater than 30dB. In a typical application (1.91GHz input frequency, 1.7GHz local oscillator and output of 210MHz), the mixer can handle an RF input as high as 10dBm without distortion, with a LO power input of only -3dBm.

The IAM-92516 is supplied in a 3.0 x 3.0 x 0.75mm lead-free and halogen-free 16-pin LPCC (leadless plastic chip carrier). The LO port is matched to 50 ohms and can be driven differentially or single-ended; the IF port is matched to 200 ohms and fully differential.

The RF port requires an external matching network for optimum input return loss and IP3 performance.

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