AGILENT Technologies has announced a new miniature E-pHEMT (enhancement-mode pseudomorphic high electron mobility transistor) field effect transistor (FET) that combines RF performance, power efficiency and reliability in a low-cost, highly reliable 2.0mm x 2.0mm x 0.75mm leadless plastic chip carrier package.
The new FET, which features third-order output intercept point (OIP3) of +42 dBm, is ideally suited to meet the needs of next-generation 2.5G and 3G base stations, which demand very high linearity for accurate signal transmission and high transmission power levels with minimum electrical power consumption and component heat generation.
The Agilent ATF-521P8 E-pHEMT FET offers performance optimized for the second and third stages of front-end low noise amplifiers (LNAs), and driver or pre-driver amplifiers in cellular base stations in the 900MHz, 1.9GHz and 2.1GHz frequency bands.
It is also ideal for fixed wireless, WLAN and other applications calling for high performance in the 50MHz to 6GHz frequency range. The single supply voltage feature eliminates the need for the second supply voltage required for HBT (heterojunction bipolar transistor) and conventional PHEMT devices.
Compared to competing GaAs HBT (gallium arsenide heterojunction bipolar transistor), GaAs MESFET (metal-semiconductor field-effect transistor) and GaAs HFET (heterojunction field effect transistor) devices, the ATF-521P8 offers an unbeatable combination of low cost and low bias voltage combined with industry-leading noise performance and the industry's highest linearity.
At 2GHz, the ATF-521P8 provides a linear power output (power output at 1dB gain compression -- P1dB) of +26.5dBm, combined with output linearity (OIP3) of +42dBm, operating at 4.5V, 200mA. It features very high reliability with a predicted point MTTF (single-point mean time to failure) of more than 300 years at a mounting temperature of +85°C.
The ATF-521P8 E-pHEMT FET is housed in the compact 2.0mm x 2.0mm x 0.75mm 8-pad industry-standard leadless plastic chip carrier JEDEC DRP-N LPCC package.
(JEDEC Solid State Technology Association is the semiconductor engineering standardization body of the Electronic Industries Alliance.) The package's lead-free backside metalisation provides excellent thermal dissipation as well as visual evidence of solder reflow.
The transistor is qualified to the moisture sensitive level one (MSL-1) classification of JEDEC standard J-STD-020, which indicates unlimited shelf life when stored at standard temperatures in an uncontrolled humidity environment and resistance to moisture-induced damage during reflow soldering processes.