AGILENT Technologies has introduced a new simulation model for high-frequency Gallium Arsenide (GaAs) and Indium Phosphide (InP) heterojunction bipolar transistors (HBTs).
The HBT model for Agilent advanced design system (ADS) electronic design automation (EDA) software provides greater accuracy and improved convergence over existing HBT models.
This helps reduce design turns and shorten the design cycle of high-frequency integrated circuits (ICs) for applications such as power amplifiers for wireless handsets and wireless local area networks.
Many high-frequency circuits are designed in GaAs or InP HBT processes. Many existing GaAs HBT models use models originally created for silicon bipolar junction transistors (Si BJTs).
Using existing Si BJT models to simulate GaAs or InP HBTs for high-frequency IC design contributes to inaccurate and incomplete results for large-signal nonlinear circuit simulations.
Agilent's HBT model is designed specifically for GaAs and InP processes used in high-frequency design, and supports both single and double heterojunctions.
The new model is based on research originally performed by a working group led by the University of California San Diego (UCSD) for a GaAs physics-based model known as the DARPA/UCSD HBT model.
Agilent engineers developed an integrated nonlinear transit-time and charge storage formulation for the model, removed discontinuities and integrated the new model into Advanced Design System.
The result is an enhanced HBT model for high-frequency circuit design that provides both unsurpassed accuracy and an increase in successful simulations due to improved convergence.
Agilent ADS is a design and simulation environment used in the creation of products such as cellular phones, wireless and broadband networks, and radar and satellite communications systems.
Agilent ADS EDA software offers full-featured simulation and layout capabilities for complete front-to-back RF and microwave IC design in a single, integrated design flow.