Home > BluGlass demonstrates record light output from LEDs made with its tech

BluGlass demonstrates record light output from LEDs made with its tech

Editorial
article image The latest result represents an over 10-fold improvement in LED efficiency over the first p-GaN demonstration published by the company less than 2 years ago in December 2012.

AUSTRALIAN LED technology innovator BluGlass has demonstrated the best ever p-GaN light output using its Remote Plasma Chemical Vapour Deposition manufacturing technology.

BluGlass is aiming to demonstrate to the industry that an RPCVD top layer (the p-GaN layers) can improve the light output of an LED.

The latest result represents an over 10-fold improvement in LED efficiency over the first p-GaN demonstration published by the company less than 2 years ago in December 2012, using the same measuring methodology.

According to BluGlass, it achieved these new efficiencies by significantly improving the “interface challenge”, a key technical hurdle that has been limiting p-GaN performance in the past.

These recent breakthroughs are the result of the enhanced plasma system in combination with new process steps which are now yielding continuing performance improvements.

BluGlass CTO, Dr. Ian Mann said, “The RPCVD p-GaN based LED performance in the last month has undergone a step change improvement. This has been achieved by focusing on two key aspects – the process steps for initiating the RPCVD p-GaN growth; and in finalising the last layers grown by MOCVD – in effect, making sure the RPCVD and MOCVD steps are compatible.”

“We are confident that the team is on the right path to demonstrate that low temperature RPCVD can enhance the performance of LEDs fabricated solely by MOCVD today.”

BluGlass says its next generation RPCVD system, the BLG-300, is nearing completion, and so may be expected to be growing GaN later in July. This ex-production scale system will double the company’s R&D capacity, and enhance its ability to address the LED milestones, the scaling of the technology towards 8” wafer deposition and the potential performance advantages of a low temperature CVD process for GaN on silicon.

Demonstration of light emission at 473nm, with full width half maximum of 22nm, from a RPCVD p-GaN layer grown on a MOCVD partial structure.

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