STMICROELECTRONICS and Samsung have signed a strategic agreement to expand 28nm FD-SOI technology.
The agreement encompasses ST's process technology and design enablement ecosystem covering 28nm FD-SOI (Fully Depleted Silicon-on-Insulator) technology. While ST already has advanced 28nm FD-SOI manufacturing capabilities at its 300mm facility in Crolles, France, Samsung will also now undertake high-volume production for the technology at its own 300mm facilities.
According to the companies, FD-SOI technology at 28nm delivers faster, cooler, and simpler semiconductor devices. This opens up the possibility of creating more powerful and lower-power systems-on-chips for next-generation electronic products in the mobile and consumer spaces.
This move ensures 28nm FD-SOI products will be available from multiple sources, providing customers with both companies' experience and knowledge of high volume manufacturing technology. The Samsung 28nm FD-SOI process will be qualified in early 2015 for volume production.
STMicroelectronics says further expansion of the 28nm FD-SOI ecosystem is likely, to include leading EDA and IP suppliers.